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IDH04SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery / No forward recovery * Temperature independent switching behavior * High surge current capability * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Breakdown voltage tested at 20mA2) * Optimized for high temperature operation * Lowest Figure of Merit QC/IF Product Summary V DC QC I F; T C< 130 C 600 4.5 4 V nC A
thinQ! 3G Diode designed for fast switching applications like: * SMPS e.g.; CCM PFC * Motor Drives; Solar Applications; UPS Type IDH04SG60C Package PG-TO220-2 Marking D04G60C Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 C T C=25 C, t p=10 ms T C=150 C, t p=10 ms T C=25 C, t p=10 s T C=25 C, t p=10 ms T C=150 C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws page 1 T j=25 C VR= 0....480 V T C=25 C Value 4 18 13.5 120 1.8 0.93 600 50 43 -55 ... 175 260 60 Ncm 2009-08-04 V V/ns W C A2s Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque Rev. 2.3 I F,max i 2dt
IDH04SG60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA Thermal resistance, junction- ambient, leaded 3.5 62 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified
Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 mA, T j=25 C I F=4 A, T j=25 C I F=4 A, T j=150 C Reverse current IR V R=600 V, T j=25 C V R=600 V, T j=150 C AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V,I FI F,max, di F/dt =200 A/s, T j=150 C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 4.5 80 10 10 <10 nC ns pF 600 2.1 2.8 0.3 1.3 2.3 25 270 A V
1) 2) 3)
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
4) 5)
Under worst case Zth conditions. Only capacitive charge occuring, guaranteed by design.
Rev. 2.3
page 2
2009-08-04
IDH04SG60C
1 Power dissipation P tot=f(T C); parameter: RthJC(max) 2 Diode forward current I F=f(T C)4); T j175 C; parameter: D = t p/T
45 40
30
25 35 30 20
0.1
P tot [W]
I F [A]
25 20 15 10
15
0.3
0.5
10
0.7 1
5 5 0 25 50 75 100 125 150 175 0 25 75 125 175
T C [C]
T C [C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current mode
I F=f(VF); t p=400 s; parameter:T j
5
I F=f(VF); t p=400 s; parameter: T j
15
-55C
4
25C -55C 150C
12
25C
3
100C
9
I F [A]
I F [A]
175C
100C
2
6
150C 175C
1
3
0 0 1 2 3 4 5
0 0 2 4 6 8
V F[V]
V F[V]
Rev. 2.3
page 3
2009-08-04
IDH04SG60C
5 Typ. capacitance charge vs. current slope Q C=f(di F/dt ) ; I FI F,max
5)
6 Typ. reverse current vs. reverse voltage I R=f(VR); parameter: T j
5
101
4
100
3
10-1
Q c [nC]
I R [A]
2
-2
175 C 150 C 100 C 25 C
10
1
10
-3
-55 C
0 100 400 700 1000
10-4 100
200
300
400
500
600
di F/dt [A/s]
V R [V]
7 Transient thermal impedance Z thJC=f(t p); parameter: D = t P/T
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 C, f =1 MHz
101
80
70
0.5
60
100 50
Z thJC [K/W]
0.2
C [pF]
10-5 10-4 10-3 10-2 10-1
0.1
40
0.05
30
10-1
0.02
20
10
0
10-2 10-6
0 100 101
t p [s]
V R [V]
102
103
Rev. 2.3
page 4
2009-08-04
IDH04SG60C
9 Typ. C stored energy E C=f(V R)
2.5
2.0
1.5
E c [J]
1.0 0.5 0.0 0 100 200 300 400 500 600
V R [V]
Rev. 2.3
page 5
2009-08-04
IDH04SG60C
PG-TO220-2: Outline
Dimensions in mm/inches Rev. 2.3 page 6 2009-08-04
IDH04SG60C
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.3
page 7
2009-08-04

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